BLF246 Datasheet, PDF (1/4 Pages) NXP Semiconductors – VHF power MOS transistor

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VHP power MOS transistor
BLF246
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
PINNING-SOT121B
PIN
1
drain
2
source
3
gate
4
source
DESCRIPTION
APPLICATIONS
• Large signal amplifier applications in the VHP frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(VGs) information is provided for matched pair
applications. Refer to the "General" section of the
handbook for further information.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-B
108
28
Fig.1 Simplified outline and symbol.
PL
GP
110
(W)
(dB)
(%)
80
>16
>55
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to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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