BLF242 Datasheet, PDF (1/4 Pages) NXP Semiconductors – HF/VHF power MOS transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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HF/VHF power MOS transistor
BLF242
FEATURES
• High power gain
» Low noise
• Easy power control
• Good thermal stability
« Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
PIN CONFIGURATION
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING-SOT123
PIN
DESCRIPTION
1 drain
2 source
3 gate
4 source
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 "C in a common source test circuit.
MODE OF OPERATION
CW, class-B
T
VDS
(MHz)
(V)
175
28
PL
GP
'ID
(W)
(dB)
(%)
5
> 13
> 50
typ. 16
typ. 60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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