BLF2045 Datasheet, PDF (1/4 Pages) NXP Semiconductors – UHF power LDMOS transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
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UHF power LDMOS transistor
BLF2045
FEATURES
• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA
- Output power = 30 W (PEP)
- Gain = 12.5 dB
- Efficiency = 32%
- dlm = -26dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (1800 to 2200 MHz)
• Internally matched for ease of use.
PINNING - SOT467C
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
OO
3
2
Top view
APPLICATIONS
• RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the 1800 to 2200 MHz frequency range
• Broadcast drivers.
Fig.1 Simplified outline.
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2200 MHz.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
fi = 2000; \ = 2000.1
VDS
PL
GP
(V)
(W)
(dB)
26
30 (PEP)
>10
no
dim
(%)
(dBc)
>30
<-25
N.I Semi-C (inductors reserves the righl to change lest conditions, parameter limits and package dimensions without notice
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