BLF175 Datasheet, PDF (1/4 Pages) NXP Semiconductors – HF/VHF power MOS transistor

tJ
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
L/-*ioauet±, Line.
HFA/HF power MOS transistor
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BLF175
FEATURES
• High power gain
« Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
PIN CONFIGURATION
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
The transistor has a 4-lead, SOT123A
flange package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (Vcs) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
Fig.1 Simplified outline and symbol.
PINNING -SOT123A
PIN
DESCRIPTION
1 drain
2 source
3 gate
4 source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
class-A
class-AB
CW, class-B
f
VDS
IDQ
(MHZ)
(V)
(mA)
28
50
800
28
50
150
108
50
30
Note
1. 2-tone efficiency.
PL
(W)
8 (PEP)
30 (PEP)
30
Gp
(dB)
>24
typ. 24
typ. 20
>1D
(%)
-
typ. 40<1>
typ. 65
d3
(dB)
<-40
typ. -35
-
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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