BLF147 Datasheet, PDF (1/4 Pages) NXP Semiconductors – VHF power MOS transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
. One,
TELEPHONE: [phone]
[phone]
FAX: [phone]
VHP power MOS transistor
BLF147
FEATURES
• High power gain
« Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
PIN CONFIGURATION
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (Vcs) information is provided
for matched pair applications. Refer
to 'General' section for further
information.
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING-SOT121
PIN
DESCRIPTION
1 drain
2 source
3 gate
4 source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
SSB, class-AB
CW, class-B
f
(MHz)
28
108
VDS
PL
(V)
(W)
28
150 (PEP)
28
150
GP
(dB)
> 17
typ. 70
no
(%)
> 35
typ. 70
ds
(dB)
< -30
-
d5
(dB)
< -30
-
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placins orders.
Quality Semi-Conductors