BFX87 Datasheet, PDF (1/3 Pages) Continental Device India Limited – PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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BFX87
BFX88
SILICON PLANAR EPITAXIAL TRANSISTORS
PNP transistors in TO-39 metal envelopes for general industrial applications.
QUICK REFERENCE DATA
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
DC current gain
-lc= 10mA; -VCE- 10V
Transition frequency at f = 100 MHz
~lc - 50 mA; -VCE = 10 V
MECHANICAL DATA
Fig.1 TO-39.
-VCBO
-VCEO
-'CM
ptot
HFE
fT
BFX87
max. 50
max. 50
max. 600
max. 600
min.
tVP. 125
BFX88
40 V
40 V
600 mA
600 mW
125
min. 100
100 MHz
Dimensions in mm
Collector connected to case
t
8.S
max
1
"L 6.6
max
Maximum lead diameter is guaranteed only for 12.7 mm.
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