BFX85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

<£e.mi-(lonaaakoi \Piodudi,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN switching transistor
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification
• Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
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BFX85
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
Ic
Ptot
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
hFE
DC current gain
fr
transition frequency
toff
turn-off time
CONDITIONS
open emitter
open base
Tamb<;25*C
Tease 51 00 °C
lc=150mA;VCE = 10V
lc = 50 mA; VCE = 10 V; f = 100 MHz
Icon = 150 mA; !Bon = 15 mA; la* = -15 mA
MIN.
„
-
-
-
-
70
50
-
TYP.
-
-
-
-
-
142
-
360
MAX.
100
60
1
800
2.86
-
-
-
UNIT
V
V
A
mW
W
MHz
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
>c
ICM
IBM
Ptot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tamb
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb $ 25 CC
Tcase 5 25 3C
25°CsTcase^1000C
MIN.
-
-
-
-
-
-
_
-
-
-65
-
-65
MAX.
100
60
6
1
1
100
800
5
2.86
+150
175
+150
UNIT
V
V
V
A
A
mA
mW
W
W
C
"C
•c
THERMAL CHARACTERISTICS
SYMBOL
P-thha
Rthj-c
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
VALUE
200
35
UNIT
KM/
K/W
Quality Semi-Conductors