BFX37 Datasheet, PDF (1/2 Pages) Continental Device India Limited – PNP SILICON PLANAR TRANSISTOR

i, One..
20 STERN ME.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
PNP SILICON PLANAR TRANSISTOR
TELEPHONE: [phone]
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FAX: [phone]
BFX37
Low Lever, Low Noise Amplifier
TO-18
Metal Can Package
ABSOLUTE MAXIMUMRATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta=25°C
Power Dissipation at TC=25°C
Operating and Storage Junction
Temperature Range
SYMBOL
VCES
Vceo
VEBO
Ic
PD
PD
TJ. Tstg
VALUE
90
80
6.0
100
360
1.2
- 55 to +200
UNIT
V
V
V
mA
mW
W
°C
THERMAL CHARACTERISTICS
Junction to Case
Rfh (j-c)
146
Junction to Ambient in free air
Rth (j-a)
486
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Cut Off Current
ICES
VCE=70V, VBE=0
VCE=70V, VBE=0,
Ta=150°C
Emitter Cut Off Current
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Emitter Saturation Voltage
'EBO
VCES
VCEO
VEBO
*VcE (sat)
VEB=4V, lc=0
lc=10uA, VBE=0
90
lc=1mA, IB=0
80
!E=10uA, lc=0
6.0
lc=10mA, lB=0.5mA
lc=50mA, lB=5mA
Base Emitter On Voltage
Base Emitter Saturation Voltage
VBE (on)
*VBE (sat)
lc=1mA,VCE=5V
lc=10mA, lB=0.5mA
lc=50mA, !B=5mA
DC Current Gain
*hFE
|c=1uA,VCE=5V
lc=10uA,VCE=5V
70
lc=100uA,VCE=5V
125
lc=1 mA, VCE=5V
125
lc=10mA, VCE=5V
125
TYP
0.65
130
MAX
10
10
10
0.25
0.40
0.9
0.95
UNIT
nA
uA
nA
V
V
V
V
V
V
V
V
230
280
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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