English
Language : 

BFW16A Datasheet, PDF (1/2 Pages) STMicroelectronics – CATV-MATV AMPLIFIERS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, fine.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
DESCRIPTION
The BFW 16A and BFW 17A are multi-emitter sili-
con planar epitaxial NPN transistors In JedecTO-39
metal case, with extremely good intermodulation
properties and high power gain. They are primarily
intended for final and driver stages in channel-and
band-aerial amplifiers with high output power from
40 to 860 MHz.
Another possible application is as the final stage of
the wide band vertical amplifier In high speed oscil-
loscopes.
BFW16A
BFW17A
CATV-MATV AMPLIFIERS
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vceo
VCER
VCEO
VEBO
Ic
ICM
Plot
TBIJ, T,
Parameter
Collector-bass Voltage (IE - 0)
Collector-emitter Voltage (Ren s 50 n)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (Ic = 0)
Collector Current
Collector Peak Current
Total Power Dissipation at Tamb S 25 °C
at TCM« S 125 °C
Storage and Junction Temperature
NPPN
Q|
Value
40
40
25
3
150
300
0.7
1.5
~ 65 to 200
Unit
V
V
V
V
mA
mA
W
W
°C
NJ Semi-Conductora reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. HoweverNJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors