BFW12 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-CHANNEL SILICON FETS

^s-tni-donaactoi ^Products.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BFW12
BFW13
N-CHANNEL SILICON FETS
Symmetrica! n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes
with the shield lead connected to the case. The transistors are intended for battery powered equipment
and other low current-low voltage applications.
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage (open drain)
Total power dissipation up to TamD =* 1 10 °C
Liram current
VDS=15V;VGS>0
Gate-source cut-off voltage
lD = 0,5nA;VDS=15V
Feedback capacitance at f = 1 MHz
VDS= 15V;VGS = 0
Transfer admittance (common source)
VDS=15V;lD = 200MA;f=1 kH2
Equivalent noise voltage
V D S = 1 5 V ; l D = 200(iA
B = 0.6 to 100 Hz
± Vrjs
~VGSO
Ptot
IDSS
max.
30
V
max.
30
V
max.
1 50
mW
BFW12 BFW13
^^
."
0,2 mA
<
5
1,5 mA
-V(p)QS <
2,5
1.2 V
Cra
<
0.80
0,80
PF
|yfs
>
0,5
0,5 mS
Vn
<
0.5
0,5 MV
MECHANICAL DATA
Fig. 1 TO-72.
Dimensions in mm
Pinning
1 - source
2 ° drain
3 = gate
4 - shield lead
connected to
case
Note: Drain and source are interchangeable.
NJ .Semi-C t'lidutlors reserves the right to change test conditions, parameter limit! und package dimensions wiihonl notice
Inliirmation rumith«t) by NJ Scmi-Cunducton if believed to he both uccurale find reliable M the lime of going to press. However
Vini-l iinJuclor; .i^suines mi re'-ptnuibility lor ;iny errors >>r uinissiiins Jiscuvured in its ii.->e M.I Scim-C un.liii.tirs
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