BFR520 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BFR520
DESCRIPTION
• High Power Gain
• High Current Gain Bandwidth Product
• Low Noise Figure
^^
SOT- 2 3 package
APPLICATIONS
• Designed for RF frontend in wideband applications in the
GHz range.such as analog and digital cellular telephones,
cordless.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
20
V
VCES ^{Collector-Emitter Voltage}
15
V
VEBO Emitter-Base Voltage
2.5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
70
mA
0.3
W
175
'C
Tstg
Storage Temperature Range
-65-150
°C
-^H•11,1M f
Tl
Marking B c
4I
LI' I U:^L
1_{L— 6}I_— *D*_-|I
1 : Base
~ • Emitter
3 ; Collector
/
\
Lp n T 1 _{L-1 L_l 1—1 .—I- =J |}
ML
4^M
1L
mm
DIM
MIN
MAX
A
0. 37
0.51
B
1,19
1. 10
C
2. 10
2,50
D
0.89
1.05
IL-
1. 78
2.05
K
2.65
3.05
K
1. 10
1.20
L
0. -!5
0.61
M
0.076
0. ITS
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