BFR35AP Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BFR35AP
DESCRIPTION
• Low Noise Figure
NF = 1.8 dB TYP. @VCE = 6 V, lc = 2 mA, f = 900 MHz
• High Gain
I S21e I 2= 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz
APPLICATIONS
• Designed for low distortion broadband amplifiers and
oscillators.
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SOT- 2 3 package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCES Collector-Emitter Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
H , h*
III
t
tI
Marking 3 c
JI
L ^LJ ; _{|* D} ^J_-L_n ^{. _ L}
i G1
1 : Base
2 :Emitter
3 : Collector
H_i ¹ H_{i *}
=^J ^l£1J
1_ZJ
r
T
k.•It
iM
±
VEBO Emitter-Base Voltage
lc
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
2.5
V
30
mA
4
mA
0.28
W
150
°C
-65-150
•c
mm
D«M
M(N
MAX
A
0. 57
0, =1
L
1, 19
i, ;0
'•,-
2.10
2. 50
D
0. 35
:. 05
-
i. :s 2. 05
K
'2. 6c
3. 05
K
1.10
1.30
L
0. ;c
O.cl
i<
0. 076
0, 178
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