BFG193 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

J.
C/
u
, L/ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BFG193
DESCRIPTION
• Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz
• High Gain
I S2ie I 2= 13.5 dB TYP. @VCE= 8 V,lc = 30 mA,f = 900 MHz
APPLICATIONS
• Designed for use in low noise .high-gain amplifiers and
linear broadband amplifiers.
SOT- 23 package
t₍<_crl_<"_-."_..^_,.^
^Sctt>;
fy^'
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
20
V
VCES ^{Collector-Emitter Voltage}
20
V
VCEO ^{Collector-Emitter Voltage}
12
V
III^{H |I—A}
Marking
t
t I ^{1 :Base}
ac
11
- : Emitter
U ' U _L ^{3 ; Collector}
1_{h— e}I*_—D*I₁
\I
j=J ; - j U
L_l I—1 1—1
i. •—' 1
ML
4^{11' —}
VEBO Emitter-Base Voltage
lc
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
2
V
80
mA
10
mA
0.6
W
150
°C
-65-150 •c
mm
DIM
MIN
MAX
A
0,57
0. 31
B
1. 19
l. ;0
V
2. I D
:. 50
D
0. S3
1.05
r_
1. 7S
2.05
H
:,65 3. 05
K
1. 10
1, 30
L
0, ic
o. ei
\
0. 076
0. 17S
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