BF961 Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

<£e.mi-Condu.cioi ZPioducti, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BF961
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N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Applications
Input- and mixer stages especially for FM- and VHP TV-tuners up to 300 MHz.
Features
• Integrated gate protection diodes
• High cross modulation performance
• Low noise figure
• High AGC-range
• Low feedback capacitance
• Low input capacitance
-OD
BF961 Marking: BF961
^
Plastic case (TO 50)
1-Drain, 2=Source, 3=Gate 1, 4=Gate 2
-OS
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
Unit
VDS
20
V
ID
30
mA
±|Q1/G2SM
10
mA
Tamb<60'C
Ptot
200
mW
TCM
150
°C
— ~~
™» Tstg ^{-55 to +150 °C}
Maximum Thermal Resistance
Tamb = 25°C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35u.m Cu
Symbol
RthChA
Value-
450
Unit;
K/W
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