BF763 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
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NPN 2 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT54
(TO-92 variant) envelope.
It is primarily intended for use in RF
amplifiers and oscillators.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 collector
BF763
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CEO
Ic
Pfot
HFE
fj
collector-emitter breakdown voltage open base
15
DC collector current
-
total power dissipation
UP tO Tamb = 60 °C
-
DC current gain
lc = 5 mA; VCE = 10 V; Tj = 25 °C 25
transition frequency
lc = 5 mA; VCE = 10 V; f = 100 MHz -
-
-
V
-
25 mA
-
360 mW
-
250
1.8 -
GHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
lc
Plot
Tstg
Tj
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
up to Tamb = 60 °C
MIN.
-
-
-
-
-65
-
MAX.
15
25
25
360
150
150
UNIT
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air
THERMAL RESISTANCE
250 K/W
\.l .Semi-Oonduvtors reserves the right to change lest conditions, parameter limits ;md package dimensions without notice
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