BF748 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN1 GHz wideband transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, iJnc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN1 GHz wideband transistor
FEATURES
• Stable oscillator operation
• High current gain
• Low feedback capacitance
• Good thermal stability.
DESCRIPTION
Low cost NPN transistor in a plastic
SOT54 fTO-92 variant) envelope.
It is intended for VHP and UHF TV
tuner applications and can be used
as a mixer and/or oscillator.
PINNING
PIN
DESCRIPTION
1 collector
2 emitter
3 base
BF748
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VC80
VCEQ
VEBO
ICM
P«
*r
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
- - 30 V
open base
-
-
20 ' V
open collector
-
-
3
V
- - 50 mA
uptoT. = 75°C(note1)
- - £00 mW
I0 - 15 mA; VCE = 10V; f = 500 MHz 0.8 1.2 1.6 GHz
LIMITING VALUES
In accordance with the Absolute Maximum System (I EC 134).
SYMBOL
PARAMETER
VCBO
VCK,
VGK
ICM
P«
T*
T,
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
uptoT, = 75°C(note1)
MIN.
-
-
-
-
-
-55
-
MAX.
30
20
3
50
500
150
150
UNIT
V
V
V
mA
mW
°C
°C
Note
1. T, is the temperature at the soldering point of the collector lead, 4 mm from the body.
VI .Semi-C (inductors reserves the right to change lest conditions, parameter limits ,md packuge dimensions without notice
Information furnished by NJ Scmi-Conductois h believed to he birth accurate and reliable .it the lime or going to prws. However \
Seini-t iwJutlors .bsuinct no ^pi'iisibiliiy tor ;my emirs ,>r umissiuns Jiscuvured in its u.se NJ Seini-CuinliKh.rs cncuuranes
n-.ri nirrs h> u-iiK 'h.ll ilMhl-^hi-r'l? ir^ .•nrr.'nr Iwthre rtlncinu ,irtfi*n