BF689K Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

^s-mi-dondaatoi iPzooucfd,
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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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NPN 2 GHz wideband transistor
BF689K
DESCRIPTION
NPN transistor in a plastic SOT54
(TO-92 variant) envelope. It is
intended for application as an
amplifier or oscillator in the VHP and
UHF range.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 collector
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
"c
Ptot
HFE
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
fj
transition frequency
CONDITIONS
open emitter
open base
up to Tamb = 60 °C
lc = 2mA;VCE = 5V; Tj = 25 °C
lc = 20 mA; VCE = 5 V; Tj = 25 °C
lc = 15 mA; VCE = 5 V; f = 500 MHz
MIN. TYP. MAX. UNIT
- - 25 V
- - 15 V
- - 25 mA
- - 360 mW
20 - -
35 - -
- 1.8 -
GHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VCER
VEBO
lc
ICM
Plot
Tstg
Tj
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
RBE < 50 ti
open collector
tp < 1 (as
up to Tamb= 60 °C
MIN.
-
_
_
-
-
-
-
-55
-
MAX.
25
15
25
3.5
25
50
360
150
150
UNIT
V
V
V
V
mA
mA
mW
°C
°C
N.I .Semi-C't mduuon reserves the right In change lest conditions, parameter limin ;md package dimensions without notice
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