BF418 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – PNP SILICON TRANSISTOR, EPITAXIAL PLANAR

Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
PNP SILICON TRANSISTOR, EPITAXIAL PLANAR
TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL
BF416
*BF418
Compl. of BF 415 and BF 417
Video output stages in TV sets
£Mjw dt tortit dn tmpllficltwrs
Vidfo dins In tiUvlttun
VCEO
4< Preferred device
DitptuMt ncommtndt
-250V
-300V
BF416
BF418
h21E(-25mA) 30
min,
fT(-25 mA)
70MHz typ.
Maximum power dissipation
Dissipation d»puisstnca mtximtle
p,o,
(Wl
!\O 100 1»0
Pllltic case TO-126- See outline drawing CB-16 on Ian page)
Bottler plutiqut
voir dutin can CB-1S ammiint p*tn
Weight : 0,7 g.
Collector connected to metal
part of cate
Cfllfcaut rtvitl * It ptnl* rntal-
llqut du txttHr
ABSOLUTE RATINGS (LIMITING VALUES)
VALEURS LIMITES ABSOLUES D'UTILISATION
Colleetor-beM voltage
Tftltntft COtlfCt9Uf*Oti§
T u - +25 "C
«nib
VCBO
BF418
-250
(Unlen otherwiw stated)
(StuflmHatlmucontnlntl
BF418
-300
V
Collector-emitter voltage
VCEO
-260
-300
V
Emitter-bate voltage
Twutan •nwnturAMt
Collector current
Courtnt ceMOHir
VEBO
-5
-6
V
'c
-200
-200
mA
Peak collector current
Cbunnr dk aiu * caH*et*ar
Power diuipation
Diulf»tfe*ili pulutna
Storage temperature
7*viipe^vttMV de fiwiAflpi
'CM
-300
-300
mA
Tca>ec 25°C
j h= 25°C
Ptot
6
6
1.25
US
W
W
rnin.
max.
%
- 56
+ 160
- 56
+ 160
•c
•c
VI .Semi-C (inductors reserves the right to change lest conditions, parameter limits ;ind package Jimeiuioiu without notice
Information furnished by NJ Scmi-Cunduclort w believed to he holh accurate and reliable ,it Ihe time of going to press. However \
Stini-C oiiduUuK .iisuiiK's iiu rcsptnuibility Cor my ermrs or umissiiuis Jiwuvurcd in its use NJ Seini-CninluUi'rs fiic
n-:n irers (n tcril\i 'liiliv-htvis ire .urrenf h<tbre ulncina «