BF417 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – NPN SILICON TRANSISTOR, EPITAXIAL PLANAR

<^£.mL-dondu<itoi LPioaucti, L/nc.
20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN SILICON TRANSISTOR, EPITAXIAL PLANAR
TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL
Compl. of BF 416 and BF 418
Video output steps in TV seta
Saga d» sortii dtt implifiatturs
Video dtnt let tfUviseurs
CEO
h21E (25mA)
fT (25mA)i
BF415
*BF 417
$f Preferred device
Oiipotitif ntemrmmU
250V
300V
BF415
BF417
30
70 MHz
min.
typ.
Maximum power dissipation
Dissipation depuisiancemaxima/e
lot
IWI
6
\0 v ^ 4 1
1
1
3
i
I
1
I
0 ^.i
tOO 150
T (oCi
«» '
Plastic caie JO-126- See outline drawing CB-16 on list pages
BoJtier pltitique
vel, ,»„,„ ratf ca.,e Ounitm o*t»
cE
Weisht : 0,7 g,
w««"
Collector connected to metal
pert of case
CollKttur tiuirl t It ptrtk mtul-
//«wdk>toft/.r
ABSOLUTE RATINGS (LIMITING VALUES)
VALEURS LIMITES ABSOLVES D'UTILISATION
Collector-base voltage
Ttntion coHKOur-bm
T ._+25°C
amb T'" "
BF41S
VCBO
2SO
(Unless otherwise stated)
IStufindiatiomeenininil
BF417
300
V
CoMector-emitter voltage
Tffition colltclHtr-jmittwr
VCEO
250
300
V
Emitter-base voltage
TtnsiOfT tmtttmr-btit
VEBO
5
5
V
Collector current
Counnt eoflbctM/r
'c
200
200
mA
Peak collector current
Couflmt df erf1* dt ceUtcnur
'CM
300
300
mA
Power dissipation
O/«;w«wto»<n/itMnc»
Storage temperature
Ttfnptntun tit stodcfgf
Tcase= 2B°C
j = 25°C
ptot
6
6
1.25
1.25
W
w
min.
max
T«g
- 55
+ 150
- 55
-H50
°c
°c
.VI ,Semi-t niiduLlors reserves the right to change test conditions, parameter limili ;md packuge dimensions without notice
Inl'nrmulion lumith«d by NI Svmi-C'onduclon it believed to hehdlh accurate andreliable .11 the lime of going to press. However
Scini-L onJuitiirs .bsuincs IM re'-ptmsibilily for uny emirs »r oinissiuns Jisuivured in its use \ Seini*Coiidtiili'rs envnurnues
n-itrii'crs (D \ciif\t il:ila-:hcet.i ire