BF391 Datasheet, PDF (1/2 Pages) Micro Electronics – NPN HIGH VOLTAGE VIDEO AMPLIFIERS

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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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BF391
BF392
BF393
NPN Silicon Planar
sistors
DESCRIPTION
These plastic encapsulated general purpose transistor* are
designed for applications requiring high breakdown voltage
and low capacitance.
The E-line package is formed by Injection moulding a SILICONE
plastic specially selected to provide a rugged one-piece encap-
sulation resistant to severe environments and allow the high
junction temperature operation normally associated with metal
can devices.
E-line encapsulated devices are approved for use in military.
Industrial and professional equipments.
PLASTIC E-LINE <TO-92)
Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18
metal can types, and for flat mounting.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Currant
Power Dissipation at Tm,b=25°C
atTc.M = 25°C
Operating and Storage Temperature Range
Symbol BF391 BF392 BF393 Unit
VCBO
200 250 300
V
VC£0
200
250
300
V
VEBO
6
6
6
V
Ic
500
mA
Plot
625
mW
1.5
W
TjlT,,,
-55 to +175
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance Junction to Ambient
Junction to Case
Symbol
Rth(l-amb)
Rthlj-cau)
Maximum
220
80
Unit
°C/W
°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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