BF179 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN SILICON ANNULAR TRANSISTORS

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20STE•RN _AVE.
•
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BF179A
BF179B
BF179C
NPN SILICON ANNULAR TRANSISTORS
. . . designed for high-frequency applications in color difference signal
power stages of color television.
• High Collector-Emitter Breakdown Voltage -
BVCER = 250 Vdc (Min) @ Ic » 4.0 mAdc - BF 179C
• Low Collector-Base Time Constant -
rbb'Cb'c " 100 ps (Max) @ Ic = 10 mAdc
• Low Collector Cutoff Current —
'CBO " 2°0 "Adc (Max) @ VCR = '60 Vdc
TELEPHONE: [phone]
(21 2) 227-6005
FAX: [phone]
NPN SILICON
HIGH-FREQUENCY
TRANSISTORS
MAXIMUM RATINGS
Reting
Collector-Emitter Voltage
(RBE • 10 k ohm)
Collector-Emitter Vortaga
Emitter-Baae Voltage
Symbol BF179A BF179B BF17BC Unit
VCER 160
220
260
Vdc
VCES
16°
220
250 Vdc
VEB
5.0
— Vdc
if
Operating Junction Temperature Range Tj -
Storage Temperature Range
TM, ••
200 —••
55 to + 200
» °C
•- °C
THERMAL CHARACTERISTICS
Charaoteriftic
Thermal Retinence, Junction to Case
Thermal Refinance, Junction to Ambient
Symbol
RTHJcate
RTHJamb
Max
45
2?0
Unit
°C/W
°C/W
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NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurateand reliable at the time of going
to press. However,NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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