BDY72 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDY72
DESCRIPTION
• Contunuous Collector Current-lc= 3A
• Collector Power Dissipation-
: Pc= 25W @TC= 25°C
Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 120V(Min)
APPLICATIONS
• Designed for use in general purpose switching and linear
amplifier applications requiring high breakdown voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
120
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
150
V
VCER
Collector-Emitter Voltage RBE= 100Q
130
V
VEBO
Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
3
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@Tc=25'C
25
W
Tj
Junction Temperature
200
•c
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX UNIT
7.0 •c/w
3
PIN 1.BASE
2. BETTER
3. COLLECT OR (CASE;
TO-66 package
^
r _{j_}
-N-1
L - -"
1_t
C
j
|
«iU-Ds
LK
j^t _{- U —*i}
1rj-^H ^{/ r\} !J
GH
Lt
GB
\ ^f
- 1^ ¹
sa
f*
I1WI1
DIM UN MAX
A ^{31L40 31^0}
8 17JO 17.70
c ^6.70
7.10
D
0.70
0.90
E
1.40 t.60
G
5,03
H
2.S4
K
9.SO 10JO
L 14.70 14.90
N 12.40 12.60
Q
1.60
3JSO
u 24JO 24^0
V
JiO
3.70
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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