BDX54 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line,
TELEPHONE: [phone]
[phone]
FAX: [phone]
DARLINGTON COPLEMENTARY
SILICON POWER TRANSISTORS
...designed for general-purpose amplifier and low speed switching
applications
FEATURES:
* Collector-Emitter Sustaining Vottage-
VCR»u«i" "*5 V (Mln) - BDXS3.BDXS4
= 60 V (Mln) - BDX53A.BDX54A
= 80 V (Mln) - BDX53B.BOX54B
= 100 V(Min) - BDX53C.BDX54C
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
NPN
BDX53
BDX53A
BDX53B
BDX53C
PNP
BDX54
BDX54A
BDX54B
BDXS4C
8 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
45-100 VOLTS
60 WATTS
MAXIMUM RATINGS
Characteristic
Symbol BDXS3 BDXS3A BDXS3B BDXS3C Unit
BDX64 BDX84A BDX54B BDXS4C
Collector-Emitter Voltage
Veto
45
Collector-Base Voltage
Vcao ⁴⁵
Emitter-Base Voltage
VEBO
Collector Current - Continuous _'c
Peak
'CM
Base Current
IB
Total Power Dissipation
PD
eTc=25°C
Derate above 25°C
60
80
60
80
5.0
8.0
12
0.2
60
0.48
100
V
100
V
V
A
A
W
W/°C
Operating and Storage Junction _TJ-TSTO
°C
Temperature Range
-65 to +150
TO-220
THERMAL CHARACTERISTICS
Ch airflctttriSuc
Symbol
Max
Thermal Resistance Junction to Case Rejc
2.08
80
70
60
50
40
30
* 10
FIGURE-1 POWER DERATING
25
50
75
100 125 190
Tc ,
Unit
°C/W
PIN 1.1
2- COLLECTOR
4.COLLECTOR(CASB)
MILLIMETERS
DIM
MIN MAX
A
14.68 15.31
B
9.78 1042
C
5.01
6.52
0 13.06 14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
1
4.22
4.86
J
1.14
1.38
K
2.20
297
L
0.33
0.55
M
2.48
258
O
3.70
3.90
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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