BD789 Datasheet, PDF (1/2 Pages) Motorola, Inc – Complementary Plastic Silicon Power Transistors

tSe.tni-dona.u.cto'i LPioducti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
Complementary Plastic Silicon
Power Transistors
. . . designed for low power audio amplifier and low-current, high speed switching
applications.
• High Collector-Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Win) — BD789, BD790
= 100 Vdc (Min) — BD791, BD792
• High DC Current Gain @ IQ = 200 mAdc
hpE = 40-250
• Low Collector-Emitter Saturation Voltage —
VcE(sat) = O-5 Vdc (Max) @ 'C = 500 mAdc
• High Current Gain — Bandwidth Product —
ft = 40 MHz (Min) @ IQ = 100 mAdc)
•MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak
Base Current
Total Power Dissipation @ TQ = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEBO
ic
IB
PD
Wstg
BD789
BD790
BD791
BD792
80
100
80
100
6.0
4.0
8.0
1.0
15
0.12
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
Rejc
Max
Unit
8.34
°C/W
BD789
BD791'
PNP
BD79O
BD792*
•Motorola Preferred Device
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
15 WATTS
TO-2Z5AA
IB
^^ _s
x ^{^^}
s
\
\
^S_V
\
1.2
o
0.8 a -
I
o_•z.
1 ^0.4
\b0
20
40
60
80 100 120 140 160
I TEMPERATURE ('C)
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors