BD776 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
BD777*
BD779*
BD776*
BD778*
BD780*
TELEPHONE: [phone]
[phone]
FAX: [phone]
PLASTIC DARUNGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
. . . designed for genera! purpose amplifier and high-speed
switching applications.
• High DC Current Gain
hfE - 1400 (Typ) @ IG - 2.0 Adc
• Collector-Emitter Sustaining Voltage - @ 10 mAdc
VCEO («"«)
- 45 Vde (Mln) — BD77B
60 Vde (Mini — BD777.778
- BO Vde (Mln) — BD779,780
• Reverse Voltage Protection Diode
• Monolithic Construction with Built-in Base-Emitter
output Resistor
MAXIMUM RATINGS
nettle
B0776
B0779
BO77B
Collector-Emitter Volugt
Collector-Baal Voltage
Emitter- Voltage
Colltctor Cumni —
Continuous Pmk
Bnt Current
Tout Device Oivipetian
TC — 25"C - Derm ibov*
2S"C
Operating and Stor«g>
junction Tempereture
Ren«.
VCEO
VCB
VEB
"c
••o
TJ.T,,S
TJ.T,,,
45
60
80
46
60
80
S.O
4.0
6.0
100
15
0.12
- 65W + 150
Vdc
Vde
Vde
Ade
mAdc
W/»C
•c
THERMAL CHARACTERISTICS
DARLINGTON
4-AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
46. 60. 80 VOLTS
IS WATTS
3Bh- "
LC^F
oE
t~
.
I
HJ~ 1
K
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_1
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.- ~J
U-R
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-J_{*-D>H.|+|0.2S(0.010)®| A®| B® |}
ThernulRnitunce. Junction to CMC
R0JC
8.34
Thermal Reiiitmce. junction to Ambient R0JA
813
FIGURE 1 - POWER DERATING
"CNt
'CM
l.«
40
s
0.4
N
ioe IM 140
T. TEMPERATURE Itl
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i_tnv_«r«_. Tmu-eioeennt.*wsT*eMm
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i coufcrai
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TO-22SAATYPE
Annular Stmteooduciort Patented by Motorale Inc.
Trademerk of Motgrole Inc.