BD750 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: [phone]
(21 2) 227-6005
FAX: [phone]
BD750/750A
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -90V(Min)- BD750
= -120V(Min)-BD750A
• High Power Dissipation
• Complement to Type BD751/751A
APPLICATIONS
• Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BD750
-100
VCEV
Collector-Emitter Voltage
V
BD750A -130
BD750
-90
VcEO(SUS) ^{Collector-Emitter Voltage}
V
BD750A
-120
VEBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-20
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation@Tc=25°C
200
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
"C
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
MAX
0.875
UNIT
'C/W
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3
I
1
V"^
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PIN 1.BASE
2. EMITTER
3. COLLECTOR (CASE)
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