English
Language : 

BD683 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN BD683
PNP BD684
ioduati, fine.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SILICON DARLINGTON POWER
TRANSISTORS
The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio
and video applications.
They are mounted in Jedec TO-126 plastic package.
PNP complement is BD684.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
i"c
IB
PT
Tj
Tsto
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
Ir
'CM
IBM
@ Tmb = 25°C
Value
120
140
5
4
6
0.1
40
150
-65 to +150
Unit
V
V
V
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
Unit
3.12
K/W
100
K/W
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors