BD545 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
*., fine.
TELEPHONE: [phone]
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FAX: [phone]
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
• Designed for Complementary Use with the
BD546 Series
• 85 W at 25°C Case Temperature
• 15 A Continuous Collector Current
• Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B C.
1
X
C X'
•o _O
tt
3^
>*
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD54S
BD545A
BD545B
BD545C
BD545
BD545A
BD545B
BD545C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
Ic
Ptot
Plot
TA
TJ
Tstg
TL
VALUE
40
60
80
100
40
60
80
100
5
15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
W
W
°C
°C
"C
°C
NJ Seini<Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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