BD433 Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

£s.m.l-(Lon(hjickoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
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BD433/435/437
DESCRIPTION
•With TO-126 package
•Complement to type BD434/436/438
APPLICATIONS
•For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
ECB
Fig.1 simplified outline (TO-126) and symbol
Absolute maximum ratings (Ta=25q
SYMBOL
PARAMETER
CONDITIONS
BD433
VCBO
Collector-base voltage BD435 Open emitter
BD437
BD433
VCEO
Collector-emitter voltage BD435 Open base
BD437
VEBO
Emitter -base voltage
Open collector
Ic
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
PC
Collector power dissipation
Tc=25l_
T,
Junction temperature
Tstg
Storage temperature
VALUE
22
32
45
22
32
45
5
4
7
1
36
150
-65-150
UNIT
V
V
V
A
A
A
W
L
i-
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