BD241 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40W)

\Pioaueti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
... designed for use in general purpose power amplifier and switching
applications.
FEATURES:
* Collector-Emitter Sustaining Voltage -
Vci««ia 45V(Mln)- BD241 ,BD242
60V(Min)- BD241A.BD242A
80V(Mln)- BD241B.BD242B
100V(Min)- BD241C.BD242C
• DC Current Gain hFE= 25(Mn)eic- 1 ,OA
* Current Gain-Bandwidth Product fT=3.0 MHz (Min)Q lc=500mA
MAXIMUM RATINGS
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN
PNP
BD241 BD242
BD241A BD242A
BD241B BD242B
BD241C BD242C
3 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
45-100 VOLTS
40 WATTS
Characteristic
Symbol BD241 BD241A BD241B BD241C Unit
BD242 BD242A BD242B B0242C
Collector-Emitter Voltage
Collector-Base Voltage
VCEO
45
SO
80
100
V
VCBO
55
70
90
115
V
Emitter-Base Voltage
Collector Current - Continuous
-Peak
VEBO
'c
Base Current
'a
Total Power Di$sipattonGTc= 25°C _PD
Derate above 25°C
Operating and Storage Junction
Temperature Range
L.TSTO
5.0
3.0
5.0
1.0
40
0.32
-65 to +150
V
A
TO-220
A
r^r
W
W/°C
i- 1 2 3
—O
°C
L.
THERMAL CHARACTERISTICS
Ch araoteristic
Symbol
Thermal Resistance Junction to Case Rejc
Max
3.125
FIGURE-1 POWER DERATING
40
35
30
25
20
15
10
25 50 75 100 125 150
Tc , TEMPERATUREfC)
Unit
°C/W
PIN 1 BASE
2.COOECTOR
3.EMITTER
4.COLLECTOR(CASE)
MILLIMETERS
DIM
MIN MAX
A
14.38 15.31
B
9.78 10.42
C
5.01 652
D 13.06 14.62
E
3.S7
4.07
F
2.42 3.66
G
1.12 1.36
H
0.72 0.96
I
422 4.96
J
1.14 1.33
K
2.20 2.97
L
0.33 0.66
M
2.48
2.96
O
3.70 3.90
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