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BD201 Datasheet, PDF (1/2 Pages) General Semiconductor – EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
(Iziizu <3E.mi-Conductoi Lpioducti, Una.
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD201, BD2Q2, BD203, BD204
Epitaxial-Base, Silicon
N-P-N and P-N-P
VERSAWATT Transistors
General-Purpose Medium-Power Types for
Switching and Amplifier Applications
Features:
• tow saturation pottages
• Complementary n-p-n and p-n-p types
• Maximum late-aroa-of-oparatlw curve*
TBRMIhJAL DESIGNATIONS
JEDBCTO-laOAB
BgjJOl and 60203 n-p-n translator* and (heir
complementary p-n-p types. BD202 end BD204 respectively.
are epilulnl-baee transistors Intended lor g wide variety of
medium-power switching ond ompllllar applications, such
as caries ana shunt regulalo't, and driver and output stages
ol high-fidelity amplifier.
All types utilize the JEDEC TO-220AB (VERSAWATT) plas-
tic package.
MAXIMUM RATINGS,-Atoo'u'v-Maifmum Vilusss:
TCS25'C
TC>2S'C
At distances > 1/8 In. (3.17 mm) Irom
case lor to s max
.................
•For p-n-p dovtett, voltage and current values sre negative.
N-P-N
P-N-P
BD201
BDJ03
BD202«
BD204I
60
80
45
60
.5
.e
,3.
.60.
. Darata linearly 0,48.
—_ -65 lo 140
,235.
V
V
V
A
A
W
W/"C
•C
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