BD131 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN power transistor

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PNP BD132
NPNBD131
SILICON PLANAR EPITAXIAL POWER
TRANSISTORS
The BD132are PNN transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
NPN complements are BD131 .
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCEO
-VCBO
-VEBO
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Value
Unit
45
V
45
V
4
V
Symbol
i_lc
iIB
PT
Ratings
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
-Ir
-low
-IBM
+|BM
; @ Tmb = 60°C
Value
3
6
0.5
0.5
15
Unit
Watts
Tj
Junction Temperature
Tstg
Storage Temperature
150
°C
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to mouting base
Value
Unit
6
KM/
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