BCY59C Datasheet, PDF (1/1 Pages) Seme LAB – Bipolar NPN Device in A Hermetically sealed TO18 Metal Package

t/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07(
U.S.A.
BCY59C
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NPN Silicon Transistor
[phone]
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LOW NOISE AUDIO AMPLIFIER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
VCEO
VEBO
Ic
IB
P.ol
T.,.. T,
Collector-amitter Voltage (VaE » 0)
Collector-emitter Voltage (Ig = 0)
Emitter-base Voltage (lc = 0)
Collector Current
Base Current
Total Power Dissipation at T,mt> s 25 °C
at Tcat. s 45 *C
Storage and Junction Temperature
|
Unit
45
V
45
V
7
V
200
mA
50
mA
0.39
mW
1
W
85 to 200 "C
DIMENSIONS
INCHcS MILLIMETERS
SYMBOL MIN MAX MM MAX
A (DIA) 0.209 0.230 5.31 5.B4
BIDIAL ^{0.178 0.195} 4.52 4.95
C
- 0.030 . 0.78
D
0.170 0.210 4.32 S.33
E 0.500 ^- 12.70 ^.
F (DIA) 0.018 0.019 0.41 0.48
0 (DIA1
0.100
2.54
H
0.050
1.27
1
0.036 0.046 0.91 1.17
J
0.028 0.048 0.71 1.22
TO-18 (REV: R1)
LEAD 1*3
THERMAL DATA
R|h t-CBBC Thermal Resistance Junction-case
R|h j-»mb Thermal Resistance Junction-ambient
Max
Max
150
450
I
°c/w
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
ICES
ICEX
IEBO
IBRIEBO*
VcE(««t>*
VBE
Vassal)*
hFE*
Parameter
Collector Cutoff Current
(VBE=0)
Collector Cutoff Currant
(VBE • - 0.2 V)
Emitter cutoff Current
Voltage (IB » 0)
Emitter-base Breakdown Voltage
(lc=0)
Collector-Emitter Saturation
Voltage
Base-emitter Voltage
Base-emitter Saturation Voltage
DC Current Gain
Test Conditions
Mln.
VCE - 45 V
VCE - 45 V
..
VCE * 45 V
VEB = 5 V
IE *10}iA
T.mb ' 150 "C
Tlm», = 100 °C
45
7
lc = 10 mA
lc = 100mA
IB = 0.25 mA
I B > 2.5mA
lc • 2 mA
VCE * 5 V
0.55
lc » 100 mA VCE = 1 V
lc - 10mA IB - 0.25 mA 0.6
lc = 100 mA IB = 2.5 mA
0.75
lc =>10 uA
VCE = 5 V
Typ.
0,1
0.1
0.12
0.4
0.65
0.75
0.7
0.9
.-
Max.
10
10
20
10
0.35
0.7
0.7
0.85
1.2
250 350 460
Unit
nA
)lA
PA
nA
V
V
V
V
V
V
V
V
lc =10 mA
VCE » 1 V
160 365
lc =100 mA
VCE =1 V
40
60
hi.
Small Signal Current Gain
c = 2 mA
VCE = 5 V
f =• 1 kHz
•'•
250
500
ft
Cc80
Transition Frequency
Emitter-base Capacitance
Collector-base Capacitance
c =10 mA
f = 100MHz
c=0
= 1 MHz
E=0
= 1 MHz
VCE = 5 V
VEB = 0.5V
VCB=10V
NF
Noise Figure
c ' 0.2 mA VCE =• 5 V
»» • 2 Wl
f = 1 KHz
ton
Turn-on Time
c • 10 mA
BI » 1 mA
c » 100 mA
BI = 10 mA
Vcc = 10 V
Vcc '10V
toff
'um-off Time
c " 10 mA
Vcc = 10 V
BI = ~ IBS = 1mA
c = 100 mA Vcc = 10 V
BI = - l B 2 »10mA
Pulsed : pulss duration - 300 us, duty cycla » 1 %.
200
MHz
11
15 pF
3.5
6
pF
2
6
dB
as 150 ns
55 150 ns
480 800 ns
_480_ 800 ns
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