BC184 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

i., L/na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
TELEPHONE: [phone]
[phone]
FAX: [phone]
BC184
BC184B
BC184C
TO-92
Plastic Package
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25°C unless specified otherwise)
DESCRIPTION
SYMBOL
Collector -Emitter Voltage
VCEO
Collector -Base Voltage
VCBO
Emitter -Base Voltage
VEBO
Collector Current Continuous
Ic
Power Dissipation @ Ta=25°C
PD
Derate Above 25°C
Power Dissipation @ Tc=25°C
PD
Derate Above 25°C
Operating And Storage Junction
TJ, T^g
Temperature Range
VALUE
30
45
6
100
350
2.8
1
8
-55 to +150
THERMAL RESISTANCE
Junction to ambient
Rth(j-a)
357
Junction to case
Rfh(j-c)
125
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector -Emitter Voltage
VCEO lc=2mA,lB=0
30
Collector -Base Voltage
VCBO lc=10uA.IE=0
45
Emitter-Base Voltage
VEBO !E=100uA, lc=0
6
Collector-Cut off Current
ICBO VCB=30V,IE=0
Emitter-Cut off Current
IEBO
VEB=4V, lc=0
DC Current Gain
hFE IC=10^A,VCE=5V
100
BC184
lc=2mA,VCE=5V
240
!c=100mA*,Vce=5V
130
Collector Emitter Saturation Voltage VCE(Sat) lc=10mA,lB=0.5mA
lc=100mA,lB=5.0mA*
Base Emitter Saturation Voltage
Base Emitter On Voltage
VBE(Sat)
VBE(0N)
lc=100mA,lB=5mA*
lc=2mA,VCE=5V
!c=100|aA,VcE=5V
lc=100mA,VCE=5V*
0.55
TYP
0.2
0.07
0.2
0.62
0.5
0.83
UNITS
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
°C/W
°C/W
MAX
15
15
UNITS
V
V
V
nA
nA
800
0.25
V
0.6
V
1.2
V
0.7
V
V
V
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