BC182L Datasheet, PDF (1/2 Pages) Micro Electronics – COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BC182L
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 10.
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AbSOlUte Maximum Ratings TC=25<C unless otherwise noted
Symbol
VCEO
VCBO
VEBO
Ic
TJt TSTO
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Storage Junction Temperature Range
Value
50
60
6
100
-55- 150
Units
V
V
V
mA
C
Electrical Characteristics Tr=25 C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
'EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Leakage Current
Test Condition
lc = 2mA, IB = 0
lc=10jiA, IE =0
IE= 100|iA, lc = 0
VCB = 50V, VBE = 0
VEB = 4V, IE = 0
Min. Typ. Max. Units
50
V
60
V
6
V
15 nA
15 nA
HFE
DC Current Gain
Vce(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Dynamic Characteristics
IT
Current Gain Bandwidth Product
Cob
Output Capacitance
hfe
Small Signal Current Gain
NF
Noise Figure
VCE = 5V, lc = 10nA
VCE = 5V, lc = 2mA
VCE = 5V, lc = 100mA
lc=10mA, IB = 0.5mA
lc = 100rnA, IB = 5mA
lc = 100mA, IB = 5rnA
VCE = 5V, lc = 2mA
40
120
80
0.55
VCE = 5V. !c = 10mA. f = 100MHz
150
VCE = 10V, lc = 0, f = 1 MHz
VCE = 5V, lc =2mA- f = 1 KHz
240
VCE = 5V,lc = 0.2mA
Rs = 2KJi, f = 1 KHz, BW = 200Hz
500
0.25 V
0.6
1.2
V
0.7
V
MHz
5
PF
500
10 dB
Thermal Characteristics TA=25 c unless otherwise noted
Symbol
PD
R0JA
RBJC
Parameter
Total Device Dissipation @TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Max.
Units
350
mW
2.8
mW/ C
357
mW/°C
125
C/W
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