BC140 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistors

tSzrni-C on
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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NPN medium power transistors
BC140; BC141
FEATURES
• High current (max. 1A)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
DESCRIPTION
emitter
base
collector, connected to case
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BC140
BC141
VCEO
collector-emitter voltage
BC140
BC141
ICM
peak collector current
Plot
total power dissipation
hFE
DC current gain
BC140-10;BC141-10
BC140-16; BC141-16
fr
transition frequency
Fig.1 Simplified outline (TO-39) and symbol.
CONDITIONS
MIN.
open emitter
-
-
open base
-
-
-
Tcase < 45 'C
-
lc = 1 00 mA; VCE = 1 V
63
100
lc = 50 mA; VCE = 1 0 V; f = 1 00 MHz 50
TYP.
-
-
-
-
-
-
100
160
-
MAX.
80
100
40
60
1.5
3.7
160
250
-
UNIT
V
V
V
V
A
W
MHz
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