BAV45 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Picoampere diode

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, {Jnc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Picoampere diode
BAV45
FEATURES
• Extremely low leakage current:
max. 5 pA
• Lowdiode capacitance
• Light insensitive.
DESCRIPTION
Silicon diode in a metal TO-18 can. It has an extremely low leakage current over
a wide temperature range combined with a low capacitance and is not sensitive
to light.
APPLICATION
• Clamping
• Holding
• Peak follower
• Time delay circuits
• Logarithmic amplifiers
• Protection of insulated gate
field-effect transistors.
a
I
k
MAM207
H—
Fig.1 Simplified outline (SOT18/15; TO-1 8 except for the two leads)
and symbol.
CAUTION
Handle the device with care whilst soldering into the circuit. The extremely
low leakage current can only be guaranteed when the bottom is free from
solder flux or other contaminations.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF
IFRM
Plot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
total power dissipation
storage temperature
junction temperature
see Fig. 2
Tamb = 25 °C; note 1
Note
1. Device mounted on a FR4 printed-circuit board.
MIN.
-
-
-
-
-
-65
-
MAX.
35
20
50
100
200
+125
125
UNIT
V
V
mA
mA
mW
°C
°C
N.I .Semi-Conductors reserves I he right to change test conditions, parameter limit* :md packuge dimensions without notice
Information furnished by NJ Scmi-t unductors n believed to he holh accurate awl reliable .11 the time of going to press. However NI
Semi-Conductors .I-.MIIIICS no responsibility fiir ;iny emirs iir omissions Jiscuvured in its u>e N.I Seini-Coiiilui.li rs cntounaes
II-TI nitrs tn ia il\K ihlashcels ire current hefcre placina urikn