BA482 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Band-switching diodes

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Band-switching diodes
BA482; BA483; BA484
FEATURES
• Continuous reverse voltage:
max. 35V
• Continuous forward current:
max. 100mA
• Low diode capacitance:
max. 1.0 to 1.6pF
• Low diode forward resistance:
max. 0.7 to 1.2 Q.
APPLICATION
• VHP television tuners.
DESCRIPTION
Planar high performance band-switching diode in a hermetically sealed glass
SOD68 (DO-34) package.
The diodes are type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VB
continuous reverse voltage
IF
continuous forward current
T»|g
storage temperature
Tj
junction temperature
PARAMETER
ELECTRICAL CHARACTERISTICS
Tj« 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
cd
diode capacitance
BA482
BA483
BA484
TO
diode forward resistance
BA482
BA483
BA484
CONDITIONS
IF » 100 mA; see Fig. 2
see Fig.3
Vn-20V
VR = 20V;Tmb-75»C
f - 1to 100 MHz; VR - 3 V; seeFig.4
IP - 3 mA; f - 200 MHz; see Fig. 5
MIN.
-
-
-65
-
MAX.
35
100
+150
150
UNIT
V
mA
«c
«C
TYP.
-
MAX. UNIT
1.2 V
-
100
nA
-
1
jiA
0.8
1.2 pF
0.7
1.0 PF
1.0
1.6 PF
0.6
0.7 Q
0.8
1.2 Q
0.8
1.2 Q
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