3N188 Datasheet, PDF (1/1 Pages) Intersil Corporation – DUAL P CHANNEL ENHANCEMENT MODE MOSFET

One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
FEATURES
Very High Input Impedance
Low Capacitance
High Gate Breakdown 3N190-3N191
Zener Protected gate 3N188-3N189
Vg & (TH) Matched
V0&(TH) Tracking
DUAL MATCHED
P-CHANNEL
ENHANCEMENT
MODE MOS FETS
3N188 3N189
3N190 3N191
MAXIMUM RATINGS
(@ 25°C ambient unless noted)
ORDERING INFORMATION
T099 WAFER
CHIP
PACKAGE DIMENSIONS
UGSS S""c G"e lo Source
Voltage
VGSs'1' Transient Gate to
Source Voltage
3N18B 3N1SO
3N189 3N191
-40V -40V
140V S125V
Voltage
3N188
3N189
3N190
3N191
3N190/W
3N191/W
3N190/D
3N191/D
't!_Iⁱ_i
TO-99
.„
r™_H°^•~l ₃
'L"' Tr4lNl
m HI 0 rc_T
VSDS Source to Drain
Voltage
-40V -40V
In
Drain Current
50mA 50mA
PQ
Power Dissipation
legchtide)
300 mW
{both sides)
525 mW
0026
0035
' Total Derating Factor 4.2mW/"C
TYP
T. [ Operating Junction -55to+150°C
2506C
0290
* ^{— - 0330 - -"}
0025
(-««"'
NOTE: SUBSTRATE
IS BODY
i, n'^
F
rM
T1(g
T,
Temperature
Storage Temperature
Lead Temperature
1/16" from Gate for
10 sec max
-65 to +200° C
+300° C
R ^{GATE 2—'/'}
GATE 1—^
C -5'02
I--S/02
• S/01
S'D 1--1
>— BODY
1
I'9"
023C>
VIEW
LEAD 1 DRAIN 1
LEAD 2 SOURCE 1
LEAD 3 GATE t
^ ^{LEAD 5 GATE 7}
LEAD 6 SOURCE 2
LEAD 7 DRAIN 2
31
" 'Device must not be tested at b1 25V more than
Vjigo.aNiai ONLY
once or for longer than 300 me.
ALL DIMENSIONS IN INCHES UNLESS OTHERWISE NOTED
BODY ISUBSTRATE) INTERNALLY CONNECTED TO METAL CASE
ELECTRICAL CHARACTERISTICS (@ 25°C and VBS = 0 unless noted)
'GSS Gflte Reverse Current
lG(f) Gate Forward Current
l Q ( f ) . Gate Forward Current @ 125°C
BVrjSS Oram-Source Breakdown Voltage
BVSDS Source-Drain Breakdown Voltage
Vcsith) Threshold Voltage
vGSith) Threshold Voltage
VGS
Gate Source Voltage
'DSS Zero Gate Voltage Drain Current
ISDS Source Drain Current
rds(on) Drain-Source on Resistance
lO(on) On Drain Current
Yfs
Forward Transconductance
YQS Output Admittance
Cja
Input Capacitance Output Shorted
Cru
Reverie Transfer Capacitance
CDSJ
Output Capacitance Input Shorted
REGIS' Real Part of Transconductance
3N188
3N189
MIN MAX
3N190
3N191
MIN MAX
10
-200
-10
-200
-25
-40
-40
-40
-40
-2.0 -5.0
-2.0 -5.0
-2.0
-5.0 -2.0
-5.0
-3.0 -6-5
-3.0 -6.5
-200
-200
-400
300
-400
300
-5.0 -30.0 -5.0 -30.0
1500 4000
1500 4000
300
300
4.5
4.5
1.5
1.0
3.0
3.0
1200
1200
UNITS
PA
PA
PA
V
V
V
V
V
PA
PA
ohms
mA
ymhos
umhos
pF
TEST CONDITIONS
VGS * -40V
VGS • -lev
ID " -10MA
Ic = - lOiiA, VgQ = 0
V B S - - I S V , ID = - i O n A
VDS - vcSr 'o = -10 MA
VDS " - ' 5 V ID- -soo MA
VDS • -15V
VDS'-2°V' lD--'°°dA
VDS- -15V. VGS- -lov
VDS --'SV. ID '-5mA,
VDS " -'5V, ID «-5mA.
VDS- -15V. ID --5mA.
VDS --15V. ID --5mA,
VDS ° -15V, ID --5mA.
- 1 kHz
-1kH2
" ' MHr
= 1 MHz
- 1 MHz
VDS • -15V, ID - -5mA, -100MHz
SWITCHING CHARACTERISTICS (@ 25°C and VB g = 0 unless noted)
'Dion)
tr
t0ff
Turn On Dil'V Ti™
Rise Tim*
Turn Off Tim*
MIN MAX UNITS
TEST CONDITIONS
15 n,
VDD--16V, !D--5mA
30 n«
RG-RL-1.4kn
50 ni
MATCHING CHARACTERISTICS (@ 25°C and VBS = 0 unless noted) 3N188 and 3N190
\B^^^^n^^^^^^^l^r
Y^l 1 L^^H BB^r
^ftl'Yfs2
VGS1 2
AVQS1.2
Forward Transconductance Ratio
Gate Source Threshold Volt«g* Differential
Gate Source Threshold Voltage Differential Change
AVGS1--2 G«« Source Threshold Voltage Differential Change
AT
with Temperature
MIN
O.B5
MAX
1.0
100
8
UNITS
mV
mV
10 mV
i
VOS--15V. ID =-500»iA, f - 1 kHz
VDS = -15V. iD*~500'lA
Vos'-i^-'o"-500"*'
T - -55°C to + 25'C
VDS--15V, !B--500»iA.
T-+55°Cto+12S°C
Quality Semi-Conductors