2SC2625_13 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – SVMTCHMODE SERIES NPN POWER TRANSISTORS

'JEIIEU ^zml-tLonauator iJ-* 10 ducts., Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SVMTCHMODE SERIES NPN POWER TRANSISTORS
... designed for use in high-voltage,high-speed,power switching
in inductive circuit, and swrtchmode applications such as switching
regulator*s,converters.
FEATURES:
•Collector-Emitter Sustaining Voltage-
VCECW««)=400V(Min)
* Collector-Emitter Saturation Voltage -
vCE(»t) = 1 -2v (Max-) 6 "c =4-° A, IB = 0-8A
* Switching Time -1, = 1.0 us (Max.) @ lc =5.0 A
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base current
Total Power Dissipation @TC= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vceo
VCBO
VEBO
'c
'CM
'B
PD
TJ.TSTO
2SC2625
400
450
7.0
10
20
3.0
80
0.64
-55to-»-150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal ResistanceJunction to Case R8JC
1.56
FIGURE -1 POWER DERATING
80
70
60
50
4°
30
20
10
25
50
75
100 125 150
Tc , TEMPERATUREfC)
TELEPHONE: [phone]
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FAX: [phone]
NPN
2SC2625
Unit
V
V
V
A
A
W
W/°C
°C
Unit
°CA/V
10 AMPERE
SILICON POWER
TRANASISTORS
400 VOLTS
80 WATTS
TO-247(3P)
PIN 1 BASE
2.COLLECTOR
MILLIMETERS
DIM
MIN MAX
A
20.63 22.38
B 15.38 16.20
C
1.90 2.70
D
5.10 6.10
E 14,81 15.22
F 11.72 12.84
G
4.20 4.50
H
1.82 2.46
I
2.92 3.23
J
0.89 1.53
K
5.26 5.66
L
18.50 21.50
M
4.68 5.36
N
2.40 2.80
O
3.25 3.65
P
0.55 0.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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