2SC2335 Datasheet, PDF (1/2 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWITCHMODE SERIES NPN POWER TRANSISTORS
... designed for use in high-voltage, high-speed,pow«r switching
in inductive circuit, they are particularly suited for 11 5 and 220 V
swftchmode applications such as switching regulator's.inverters.DC
-DC and conveter
FEATURES:
*Coll«ctor-Emittor Sustaining Voltage-
c«>Mu»,
Collector-Emitter Saturation Voltage -
VCE(«D = 1 0 V (Max.) Q lc = 3.0 A, IB = 0.6 A
Switching Time - t, = 1 .0 us (Max.) Q lc =3.0 A
MAXIMUM RATINGS
Characteristic
Collector-Emitter VoKage
Collector-Base Voltage
Emitter-Base VoKage
Collector Current - Continuous
-Peak
Base current
Total Power Dissipation <$TC = 25°C
Derate above 2S°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
vc»o
VEBO
>C
ICM
'B
PD
TJ 'TSTO
2SC2336
400
500
7.0
7.0
15
3.5
40
0.32
-55 to +150
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Max
3.125
FIGURE -1 POWER DERATING
j25
•20
i 15
MO
25
50
75
100
125
150
Tc , TEMPERATURE(»C)
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NPN
2SC2335
Unit
V
V
V
A
A
W
W/°C
°C
7.0 AMPERE
SILICON POWER
TRANASISTORS
400 VOLTS
40 WATTS
TO-220
Unit
°C/W
PM 1.BASE
2.COLLECTOR
3.EMTTER
4.COU£CTOR(CA$E)
MILLIMETERS
DIM
MIN MAX
A 14.68 15,31
B
9.78 10.42
C
5.01
6.52
D 13.08 14.62
E
3.57 4.07
F
2.42 3.66
G
1.12 1.36
H
0.72 0.96
I
4.22 4.93
J
1.14
1.38
K
2.20 2.97
L
0.33 0.55
M
2.48 2.96
O
3.70 3.90
Quality Semi-Conductors