2SC2333_13 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPIM SILICON POWER TRANSISTOR

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20 STERN AVE.
TELEPHONE: [phone]
SPRINGFIELD, NEW JERSEY 07081
[phone]
USA
NPIM SILICON POWER TRANSISTOR ^{FAX: [phone]}
DESCRIPTION
The 2SC2333 is NPN silicon triple diffused transistor designed for
switching regulator, DC-DC converter and ultrasonic appliance ap-
plications,
FEATURES
• High speed switching.
• Low collector saturation voltage.
• Specified of reverse biased SOA with inductive loads.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Tc =25 °C)
Total Power Dissipation
Maximum Voltages and Currents (Ta =25 °C)
VCBO Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
'c(DCI Collector Current (DC)
'c(pulse) Collector Current (pulse)*
'B(DC) Base Current (DC)
* PW « 350 MS, Duty Cycle -i 10 %
-55 to +150 °C
150 °C Maximum
15 W
500 V
400 V
7.0 V
2.0 A
4.0 A
1.0 A
PACKAGE DIMENSIONS
in millimeters (inches)
„ 10.7MAX.
05 (0.421 MAX.), 3 6 i ( ) 2
(f 0.142)
«££„,
'-1.3*0.2
(0.051)
-4-_28
^T^(Oll)
1. Base (B)
2. Collector (C)
3. Emitter IE)
4. Fin (Collector)
JEDEC: TO-220AB
ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
«on
*stg
vCE(sat)
vBE(sat)
VCEO(SUS)
VCEXISUSH
CHARACTERISTIC
Turn On Time
Storage Time
Fall Time
DC Current Gain**
DC Current Gain**
Collector Saturation Voltage**
Base Saturation Voltage**
Collector to Emitter Sustaining Voltage
Collector to Emitter Sustaining Voltage
VCEX(SUS)2 Collector to Emitter Sustaining Voltage
IC8O
ICER
ICEX1
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
'CEX2
Collector Cutoff Current
Emitter Cutoff Current
**Pulse Test : PW a 350 ^s. Duty Cycle S 2 %/Pulsed
WIN.
20
10
400
450
400
TYP.
MAX,
1.0
2.5
1.0
80
1.0
1.2
10
1.0
10
1.0
10
UNIT
TEST CONDITIONS
MS
IC-0.5 A. lgi =-lB2 =0.1 A
RL= soo n, VCG=150 v
See Test Circuit.
VCE = 5.0 V, lc = 0.1A
VCE = 5.0 V, IC = 0.5A
V
V
V IC = 0.5 A, IB = 0.1 A, L= 1 mH
lc = 0.5 A, IB1 = —I[32= 0.1 A, Ta= 125 °C,
L = 180 MH, Clamped
IC= 1.0 A, IB] =0.2 A,-IB2 = 0.2 A,
Ta=125°C. L= 180 MH, Clamped
MA
mA
E = 51 n,Ta=125°C
MA
400V,VBE(OFF) = -5.0 V
mA
400V.VBE(OFF) = -5.0 V,
Ta = 125°C
MA V E B = 5 . 0 V , IC
Classification of hFE1
Rank
Range
M
20 to 40
L
30 to 60
K
40 to 80
Test Conditions :
= 5.0 V, IQ^ 0.1 A
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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