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2SC2245_13 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors
!_/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
Product Specification
2SC2245
DESCRIPTION
•With TO-3 package
High voltage ,high speed
APPLICATIONS
•Power switching
•Power amplification
power driver
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratlngt(Ta"25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
Vcw
Vao
Collector-emitter voltage
Emitter-base voltage
Ic
Collector current
leu
Collector current-peak
PT
Total power dissipation
Tj
Junction temperature
T««
Storage temperature
CONDmONS
Open emitter
Open base
Open collector
Trts25L!
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R|h|-mb
Thermal resistance from junction to mounting base
VALUE
450
400
5
10
20
100
200
-65-200
UNFT
V
V
V
A
A
W
-
VALUE
1.0
UNIT
vw
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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