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2SC1470 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – POWER TRANSISTOR
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SC1470
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SILICON NPN POWER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
850
V
VcEO(SUS) Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation@Tc=25°C
250
W
Tj
Junction Temperature
200
"C
Tstg
Storage Temperature
-65-200 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX
0.7
UNIT
•c/w
1
M3S
Iran
MM
39 00
9.30 11.10
•a .S3
1350
1? {
_4,
~ZL
450
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheetsare current before placing orders.
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