2SB757 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

J.Elieu ^s.mi-L-onaactoi I/ loaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP PowerTransistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB757
DESCRIPTION
•With TO-3PN package
•High collector current
•Wide area of safe operation
•Complement to type 2SD847
APPLICATIONS
•Audio amplifications
•Serie regulators
•General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
1 23
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (Tc=25
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
Ic
Collector current
IB
Base current
PC
Collector power dissipation
Tc=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-40
-40
-5
-15
-5
80
150
-55-150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
Quality Semi-Conductors
VALUE
1.56
UNIT
/W