2SB643 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-power general amplification)

, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
2SB643, 2SB644
Silicon PNP epitaxial planer type
TELEPHONE: [phone]
[phone]
FAX: [phone]
For low-power general amplification
Complementary to 2SD638 and 2SD639
• Features
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
• Absolute Maximum Ratings (Ta=25'C)
Parameter
Symbol
Ratings
Unit
Col lector to 2SB643
-30
base voltage 2SB644
VCBO
-60
V
Collector to 2SB643
-25
emitter voltage 2SB644
VCEO
-50
V
Emitter to base voltage
VEBO
-7
V
Peak collector current
k?
-I
A
Collector current
k
-0.5
A
Collector power dissipation _PC
Junction temperature
Tj
Storage temperature
Stg
600
mW
ISO
•c
-55-+150
•c
Unit: mm
2510.1
fl1°l
i_•t
f
0.4510.0
l:Base
2:Collector
3:Emitter
EIAJ:SC-7I
M Type Mold Package
Electrical Characteristics (Ta=25°C)
Parameter
Symbol
Collector cutoff current
Collector to base
voltage
2SB643
2SB644
'cBO
'CEO
VCBO
Collector to emitter
voltage
2SB643
2SB644
VCEO
Emitter to base voltage
VEBO
Forward current transfer ratio
IW
hFE2
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VcE(sal)
FT
Cob
Conditions
VCB = -20V, IE = 0
VCE = -20V, IB = 0
IE = ~10uA, Ic = 0
VCE =-lOV, Ic = -150mA'2
VCE = -10V,lc = -500mA'2
lc = -300mA, IB = -30mA'2
VCB = -10V, I E = 10mA, f= 200MHz
VCB = -IOV, [E = 0, f= IMHz
min typ max Unit
-100 nA
-I
(iA
-30
V
-60
-25
V
-50
—7
V
85
340
40
90
-0.35 -0.6
V
200
MHz
6
15
PF
Pulse measurement
*'hFE| Rankclassification
Rank
hpEi
Q
85- 170
R
120-240
S
170-340
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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