2SB1642 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
(212)227*6005
FAX: [phone]
2SB1642
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• Collector Power Dissipation-
: Pc= 25 W@ Tc= 25'C
• Low Collector Saturation Voltage-
: VCE(satf -1.5V(Max)@ (lc= -2.5A, IB= -0.25A)
APPLICATIONS
• Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
1
?W
1 23
2
<
3
P,N 1.BASE
2. COLLECTOR
3.BWITTER
TO-220F package
B-
- C-
r^'T7;i9 •*
'(••*•:' •]
'r
i. •—,—
U ^- _. ^{••. '-:'} _j! ^'
I_i A
|
VCBO Collector-Base Voltage
VCEO ^{Collector-Emitter Voltage}
-60
V
-60
V
H
-R-
K
^_^-.J .
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@Tc=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
-7
V
-4
A
-1
A
2
W
25
150
°C
-55-150 •c
- -D
- N-
J --
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
q 2.70 2.90
R 2.20 2.40
s 2.65 2.85
u 6.40 6.60
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