2SB1604 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-voltage switching)

, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB1604
DESCRIPTION
• High-speed Switching
• Low Collector to Emitter Saturation Voltage
: VCE(sat)= -0.6V(Max.)@lc= -10A
• Full-pack Package With Outstanding Insulation,
Which Can Be Installed to The Heat Sink With One Screw
APPLICATIONS
• Designed for low-voltage switching and general purpose
applications.
™
123
2
•^
3
PIN 1.BASE
2. COLLECTOR
3. BETTER
TO-220F package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
Vceo
Collector-Emitter Voltage
-20
V
a
- C-
-S-
*
1
K - V 9 ^{"f " r -T i r;—o ,-••, <~>"f! »}
' io;;;oj
U ;' < , ;
-•->'.';
1A
'!
i
i
**
*I
v"" t
i .L
H
, .• , .'. •. , '
" R-
i
', < :
. . : ; ;^' ;
K
;'
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
I CM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25°C
PC
Collector Power Dissipation
@ Tc=25"C
Tj
Junction Temperature
-20
A
2
W
40
W
150
'C
Tstg
Storage Temperature Range
-55-150 °c
- -0
- N-
J --
mm
DIM WIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
Q 2.70
R 2.20
S 2.65
a 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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