2SB1569 Datasheet, PDF (1/2 Pages) Rohm – POWER TRANSISTOR

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB1569
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-120V(Min)
• Complement to Type 2SD2400
APPLICATIONS
• Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
Vceo
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-3.0
A
2
W
20
150
QC
-55-150 r
2
*WP
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123
3
PIN 1.BASE
2. COLLECTOR
3. BETTER
TO-220F package
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H
-R-
K
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mm
DIM MIN
A 14.05
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
Q 2.70
R 2.20
S 2.65
U 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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