2SB1568 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (-80V, -4A)

L/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SB1568
DESCRIPTION
• Collector-Emitter Breakdown Vbltage-
: V(BR)CEo= -80V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -2A)
• Complement to Type 2SD2399
APPLICATIONS
• Designed for power amplifier applications.
1 ^R-
123
PIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-220F package
C-
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
-80
V
VCEO ^{Collector-Emitter Voltage}
-80
V
VEBO ^{Emitter-Base Voltage}
-7
V
Ic
Collector Current-Continuous
-4
A
I CM
Collector Current-Peak
Collector Power Dissipation
@Ta=25t:
PC
Collector Power Dissipation
@TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature
-6
A
2
W
30
150
•c
-55-150 °c
- R-
Q
J --
N-
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 2.85
U 6.40 6.60
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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